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trenchfet power mosfets: 2.5-v rated low 3.3-m r ds(on) low gate resistance

synchronous rectification low output voltage synchronous rectification SI7862DP vishay siliconix new product document number: 71792 s-05459?rev. a, 21-jan-02 www.vishay.com 1 n-channel 16-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) 0.0033 @ v gs = 4.5 v 29 16 0.0055 @ v gs = 2.5 v 23 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view n-channel mosfet g d s

parameter symbol 10 secs steady state unit drain-source voltage v ds 16 gate-source voltage v gs 8 v t a = 25 c 29 18 continuous drain current (t j = 150 c) a t a = 70 c i d 23 14 pulsed drain current (10 s pulse width) i dm 60 a continuous source current (diode conduction) a i s 4.5 1.6 t a = 25 c 5.4 1.9 maximum power dissipation a t a = 70 c p d 3.4 1.2 w operating junction and storage temperature range t j , t stg ?55 to 150 c

parameter symbol typical maximum unit t 10 sec 18 23 maximum junction-to-ambient a steady state r thja 50 65 c/w maximum junction-to-case (drain) steady state r thjc 1.0 1.5 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI7862DP vishay siliconix new product www.vishay.com 2 document number: 71792 s-05459 ? rev. a, 21-jan-02

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 12.8 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 12.8 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 30 a a v gs = 4.5 v, i d = 29 a 0.0027 0.0033 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 23 a 0.0045 0.0055 forward transconductance a g fs v ds = 6 v, i d = 29 a 140 s diode forward voltage a v sd i s = 4.5 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 48 70 gate-source charge q gs v ds = 6 v, v gs = 4.5 v, i d = 29 a 11.8 nc gate-drain charge q gd 8.9 gate resistance r g 1.3 turn-on delay time t d(on) 42 60 rise time t r v dd = 6 v, r l = 6 38 60 turn-off delay time t d(off) v dd = 6 v, r l = 6 i d 1 a, v gen = 4.5 v, r g = 6 120 180 ns fall time t f 50 75 source-drain reverse recovery time t rr i f = 2.9 a, di/dt = 100 a/ s 80 120 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.

0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 012345 v gs = 5 thru 2.5 v 25 c t c = 125 c ? 55 c 2 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d
SI7862DP vishay siliconix new product document number: 71792 s-05459 ? rev. a, 21-jan-02 www.vishay.com 3

0.000 0.003 0.006 0.009 0.012 0.015 02468 0.000 0.002 0.004 0.006 0.008 0.010 0 102030405060 0 1 2 3 4 5 0 1224364860 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2000 4000 6000 8000 10000 03691215 c rss c oss c iss v ds = 6 v i d = 29 a v gs = 4.5 v i d = 29 a v gs = 2.5 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s i d = 29 a on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) v gs = 4.5 v
SI7862DP vishay siliconix new product www.vishay.com 4 document number: 71792 s-05459 ? rev. a, 21-jan-02

? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) 0 120 200 40 80 power (w) single pulse power time (sec) 160 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 110 0.1 0.01 0.001

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